实验室前期对电化学沉积Cu2O薄膜进行了系统的研究，发现其沉积与沉积电压、溶液温度和pH值等密切相关。本文以电化学沉积Cu2O薄膜为例，从而在实验室构建椭偏仪在位监控电化学沉积系统。
椭偏仪在位表征电化学沉积的系统搭建（四）-电化学沉积及原理
2.电化学沉积
电化学沉积是半导体薄膜沉积和微电子制备铜互连的重要制备方法。而在沉积过程中的成核和生长对于半导体薄膜和铜互连的性质非常重要，椭偏仪在位监测提供一种实时监控薄膜沉积的方法。但是椭偏仪在位监测受到光路设计，实验装置，固液界面以及光谱解析的影响，构建其监测系统是一个挑战。实验室前期对电化学沉积Cu2O薄膜进行了系统的研究，发现其沉积与沉积电压、溶液温度和pH值等密切相关。本文以电化学沉积Cu2O薄膜为例，从而在实验室构建椭偏仪在位监控电化学沉积系统。
不同于真空薄膜生长，电化学沉积生长过程涉及到溶液层和固液界面，导致其在位监测是一个挑战。
2.1原理
电化学沉积是利用氧化还原反应在电极表面上沉积得到各种薄膜的材料制备方法。在沉积过程中电极表面的状态、沉积电压或电流的大小、沉积电解液的温度和pH值都会对得到的薄膜的相产生影响。故而可以通过沉积中电压、电流的调控沉积不同成分组成及不同微观形貌的薄膜。利用电化学沉积可以减小制作成本、提高产量，且由于其较好的可控性和可操作性，目前已经广泛应用于工业化生产，实现电化学大规模沉积。
电化学薄膜沉积可分为恒压沉积和恒电流沉积。恒压法又分为过电位沉积和欠电位沉积。过电位沉积就是在大于能斯特电位的电压下进行沉积。欠电位沉积除了在单层(亚单层)沉积外，有时当基底影响到第二、第三个单层时也可以在欠电位下沉积。Hevesy于1912年第1次报道了不同放射性元素在Cu电极上的欠电位沉积现象。目前，报道过的欠电位沉积体系有质子性溶剂、离子液体及有机溶剂等。
在电化学过程中，由于电化学反应的存在电极和溶液界面会出现溶剂离子浓度从本体溶液浓到电极界面浓度降低的过程，而从本体溶液浓度到电极表面溶液浓度的这一过渡区域就叫扩散层。图1-6为Gouy-Chapman-Stern双电层模型，扩散层是外亥姆霍兹层(OHP)到溶剂浓度达本体溶液浓度的区域，扩散层的厚度取决于溶液中离子的浓度，当浓度大于10-2M时，扩散层的厚度将小于30nm。
图1-6电极-溶液双层区模型
因此电化学沉积过程发生在固液界面，而溶液的固液界面比较复杂，包含了扩散层等。
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