椭偏仪在位表征电化学沉积的系统搭建（二十五）- 全波段沉积过程的准在位测试分析-介电常数

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椭偏仪在位表征电化学沉积的系统搭建（二十五）- 全波段沉积过程的准在位测试分析-介电常数

介电常数(、)

图4-7(a，c)是不同沉积时间介电常数实部e1随波长变化图，与折射率n的趋势相似。随着时间的变化，值发生变化。当沉积时间为180s的时候，在500-800nm长波范围，其值从衬底的-20增加到-0.5，这也意味着新的物质沉积，导致衬底的信息减少。在沉积时间增加到360s和540s时，整体上值比180s减小了3左右，在350nm附近出现一个较明显的波包，同时在550nm附近出现一个波包。当沉积时间增加到720s之后，的值恢复到沉积180s附近，但是在500-800nm波段稍小，且在500nm附近出现波包。沉积时间为900s时，值的变化和720s一致，但是出现的波包位置大概在530nm附近。当时间为1080s时，在300-500nm波段其值和720s一样，在长波段稍大，且出现了500nm和600nm附近的两个波包。从图4-7(a，c)可以看出随着沉积的变化，沉积的CU₂O导致值在500-600nm的时候有额外的峰出现，且和吸收系数一样存在红移现象。

图4-7(b，d)是不同沉积时间下测得的介电常数虚部，随着时间的变化，值发生变化。当沉积时间为180s的时候，在500-800nm的长波范围，其值大概从衬底的0增加到4，同样也意味着新的物质沉积，导致衬底的信息减少。在沉积时间增加到360s时，和180s比，出现了两个比较明显的波包，大约在400nm和590nm附近。当沉积时间增加到540s之后，的值随着波长减小，在600nm到800nm波段接近0，且在470nm和550nm附近出现了波包。沉积时间为720s时，其变化和360s一致，但是出现的波包位置大概在400nm和550nm附近且波包变得更大。当时间为900s时，在300-500nm波段其值和360s一样，在400nm、500nm和600nm附近出现波包。时间为1080s时，变换趋势和900s相同，只是波包在400nm、530nm和680nm附近出现。从图4-7(b，d)可以看出随着沉积的变化，沉积的CU₂O导致值在540s的时候zui为特殊，可能是由于沉积厚度引起。同样的，也使得在500nm-600nm波段有新的峰出现，它也归因于沉积物的出现。

图4-7不同沉积时间得到的椭偏数据图(a，c),(b，d)

图4-8是相对于0s时不同沉积时间的改变Δ随波长的变化图。可以看到相对于没有沉积时，除了540s以外，其余的Δ在300到530±20nm波段为负值，在530±20到800nm波段为正值，且变化趋势一致。540s的Δ在整个波段除了580nm和660nm两个点以外都是负值，但是在整体上的变化趋势和其余时间大致一样。说明随着时间增加，沉积表面对光的响应一直在变化，故而沉积的物相及表面粗糙度在变化。

图4-8相对于0s时不同沉积时间的改变Δ随波长的变化图

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